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The Electrochemical Society, ECS Transactions, 1(34), p. 473-478, 2011

DOI: 10.1149/1.3567622

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Atomic-Layer Deposition of Lutetium Aluminate Thin Films for Non-Volatile Memory Applications

Journal article published in 2011 by Christoph Adelmann ORCID, Johan Swerts, Thierry Conard, Bert Brijs, Alexis Franquet, An Hardy, Hilde Tielens, Karl Opsomer, Alain Moussa, Marlies K. Van Bael ORCID, Malgorzata Jurczak, Jorge A. Kittl ORCID, Sven Van Elshocht
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Thin LuxAl2−xO3 films were deposited by atomic-layer deposition using Lu(thd)3, and TMA in combination with O3 as oxidizer. High-quality dielectric films were obtained with good process con-trol. The full range of the Lu/(Lu+Al) composition was found to be accessible. The films showed bulk density and low roughness. As a result, this process enables the study of LuxAl2−xO3 as dielectric in advanced non-volatile memory devices.