Published in

American Chemical Society, ACS Nano, 9(8), p. 9680-9686, 2014

DOI: 10.1021/nn504420r

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Direct Light Pattern Integration of Low-Temperature Solution-Processed All-Oxide Flexible Electronics

This paper is available in a repository.
This paper is available in a repository.

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Abstract

The rise of solution-processed electronics, together with their processing methods and materials, provides unique opportunities to achieve low-cost and low-temperature roll-to-roll printing of non-Si based devices. Here, we demonstrate a wafer-scale direct light patterned, fully transparent, all-solution-processed, and layer-by-layer-integrated electronic device. The deep ultraviolet irradiation of specially designed metal oxide gel films can generate fine-patterned shapes ~3 μm, which easily manifest their intrinsic properties at low temperature annealing. This direct light patterning can be easily applied to the 4˝ wafer scale and diverse pattern shapes, and provides feasibility for integrated circuit applications through the penetration of deep ultraviolet on the quartz mask. With this approach, we successfully fabricate all-oxide based high-performance transparent thin-film transistors on flexible polymer substrates.