Published in

IOP Publishing, Journal of Physics: Conference Series, 18(500), p. 182032, 2014

DOI: 10.1088/1742-6596/500/18/182032

Links

Tools

Export citation

Search in Google Scholar

The effect of high non-hydrostatic pressure on III-V semiconductors: Zinc blende to wurtzite structural phase transition and multiphase generation

Journal article published in 2014 by P. S. Pizani ORCID, R. G. Jasinevicius
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Red circle
Preprint: archiving forbidden
Red circle
Postprint: archiving forbidden
Green circle
Published version: archiving allowed
Data provided by SHERPA/RoMEO

Abstract

Raman scattering was employed to study structural phase transitions of InSb, GaSb and GaAs induced by highly non-hydrostatic pressures applied by mechanical impact, in which high compression/decompression rates are imposed to the sample. The results showed that is possible to produce several structural phases localized in different micrometric regions of the same sample: the zinc blende to possibly wurtzite structural phase transition and the generation of a multiphase state.