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IOP Publishing, Laser Physics Letters, 5(4), p. 341-344, 2007

DOI: 10.1002/lapl.200610121

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Photobleaching of Ga<sub>2</sub>S<sub>3</sub>-GeS<sub>2</sub> films prepared with pulsed laser deposition

Journal article published in 2007 by A. Tverjanovich ORCID, A. Kotikova, E. N. Borisov
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Influence of the illumination with energy above band gap on optical properties of the thin (x)(Ga2S3)(1-x)(GeS2) films prepared with Pulsed Laser Deposition was investigated. Observed photo-induced bleaching is due to photo-oxidation of Ge and possible Ga atoms. Increasing of Ga content in the film results in increasing of the bleaching effect. This process is limited by the rate of diffusion of oxygen. (© 2007 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA)