The doping of diamond by ion implantation has been feasible for 25 years, but with the proviso that low dose implants can be annealed whereas high dose implants “graphitize”. An understanding of the types of defects, and their depth profiles, produced during the doping/implantation of diamond remains essential for the optimization of high-temperature, high-power electronic applications. This study focuses on investigating the nature of the radiation damage produced during the implantation of carbon ions into synthetic type Ib and natural diamonds using a spread of 4 energies, corresponding to typical doping energies, according to the CIRA (Cold-Implantation-Rapid-Annealing) routine, as well as a single energy implantation at room temperature. Both conventional and high resolution cross-sectional electron microscopies were achieved and used to analyze the implanted diamonds in conjunction with electron energy loss spectroscopy (EELS) and selected area diffraction (SAD). The cross sections were obtained using two different preparation methods.