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American Institute of Physics, Journal of Applied Physics, 24(117), p. 245303

DOI: 10.1063/1.4923024

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The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

International audience