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Temperature effect on the electron emission yield of BN-SI02 under electron irradiation

Proceedings article published in 2014 by Mohamed Belhaj, N. Guibert, K. Guerch, P. Sarrailh ORCID, N. Arcis
This paper is available in a repository.
This paper is available in a repository.

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Preprint: policy unknown
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Postprint: policy unknown
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Published version: policy unknown

Abstract

We report measurement of electron-emission yield under the impact of electrons on BN–SiO 2 . The effect of the temperature on the yield of BN–SiO2 is investigated. It is found that, the electron emission drop significantly when the temperature is increased from 22°c to 400°C. The representativeness of EEY measurements on ceramics at room temperature and that not suffered from the specific environment of a Hall Thruster (elevate temperature, electron and ion bombardment) is thereafter discussed.