Published in

American Institute of Physics, Applied Physics Letters, 11(107), p. 113105, 2015

DOI: 10.1063/1.4931132

Links

Tools

Export citation

Search in Google Scholar

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Orange circle
Published version: archiving restricted
Data provided by SHERPA/RoMEO

Abstract

International audience