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Elsevier, Thin Solid Films, (541), p. 87-91

DOI: 10.1016/j.tsf.2012.10.134

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Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

Journal article published in 2013 by Cédric Robert Robert, Thanh Tra Nguyen, T. Nguyen Thanh, Antoine Létoublon, Mathieu Perrin, C. Cornet ORCID, Christophe Levallois, Jean-Marc Jancu, Jacky Even ORCID, Pascal Turban ORCID, Andrea Balocchi, Xavier Marie, Olivier Durand, Alain Le Corre, A. Le Corre
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Abstract

original title in E-MRS Spring 2012 - Symposium W : "Development of a laser structure for the pseudomorphic integration on silicon" ; International audience ; AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments.