Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 5(28), p. 926
DOI: 10.1116/1.3483165
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Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
Journal article published in 2010 by
Camille Petit-Etienne,
Maxime Darnon 
,
Laurent Vallier,
Erwine Pargon,
Gilles Cunge,
François Boulard,
Olivier Joubert,
Samer Banna,
Thorsten Lill
,
Laurent Vallier,
Erwine Pargon,
Gilles Cunge,
François Boulard,
Olivier Joubert,
Samer Banna,
Thorsten Lill
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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