AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack generation and achieve high reflectivity with an optimum number of periods a simple approach has been investigated. Using this approach, a coherently strained 20-pair Al0.27Ga0.73N/GaN (42 nm/36 nm) DBR has been designed and grown. No cracks were observed over 2” wafer. Around 90% reflectivity at 384 nm and a stop-bandwidth of 18 nm was obtained by having good crystalline quality and abrupt and flat interfaces.