High performance transparent conducting oxides (TCOs) have significance for optimising photovoltaic (PV) performance. The efficiency of the resulting solar cells is dependent particularly on achieving high light scattering, low resistivity and low absorption (via low FCA). These properties have been targeted by systematic exploration of the atmospheric pressure chemical vapour deposition growth parameters, in particularly the deposition temperature and growth rate. APCVD processes are particularly suited to use in industry due to the high volume, continuous growth processes and fast growth rates achievable. Using the APCVD process, F-doped SnO2 has been deposited on glass using monobutyl tin trichloride with trifluoro-acetic acid as the dopant source. The deposited films were characterised for crystallinity, morphology (roughness), optical haze and electrical properties (via Hall measurement) to aid optimisation of material suitable for solar cells. Samples were then used in manufacture of single a-Si:H solar cells, which showed enhanced performance, in comparison to commercially available TCO CVD coated glasses, with high quantum efficiency yield.