All solution-processed, hybrid light emitting field-effect transistors
Journal article published in 2014 by
Khalid Muhieddine,
Mujeeb Ullah,
Bhola N. Pal,
Paul Burn,
Ebinazar B. Namdas 
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Abstract
All solution-processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.