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EDP Sciences, The European Physical Journal B, 3(14), p. 509-513

DOI: 10.1007/s100510051059

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Charge-carrier density collapse in and epitaxial thin films

This paper is available in a repository.
This paper is available in a repository.

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Abstract

We measured the temperature dependence of the linear high field Hall resistivity of ( K) and ( K) thin films in the temperature range from 4 K up to 360 K in magnetic fields up to 20 T. At low temperatures we find a charge-carrier density of 1.3 and 1.4 holes per unit cell for the Ca- and Sr-doped compound, respectively. In this temperature range electron-magnon scattering contributes to the longitudinal resistivity. At the ferromagnetic transition temperature a dramatic drop in the number of charge-carriers n down to 0.6 holes per unit cell, accompanied by an increase in unit cell volume, is observed. Corrections of the Hall data due to a non saturated magnetic state will lead a more pronounced charge-carrier density collapse.