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IOP Publishing, Journal of Physics D: Applied Physics, 4(45), p. 045103, 2012

DOI: 10.1088/0022-3727/45/4/045103

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Effect of the annealing treatments on the electroluminescence efficiency of SiO2layers doped with Si and Er

Journal article published in 2012 by O. Jambois, J. M. Ramírez, Y. Berencén ORCID, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi ORCID, J.-P. Colonna, J.-M. Fedeli, B. Garrido
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Abstract

Abstract We studied the effect of rapid thermal processing and furnace annealing on the transport properties and electroluminescence (EL) of SiO2 layers doped with Si and Er ions. The results show that for the same annealing temperature, furnace annealing decreases the electrical conductivity and increases the probability of impact excitation, which leads to an improved external quantum efficiency. Correlations between predictions from phenomenological transport models, annealing regimes and erbium EL are observed and discussed.