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American Institute of Physics, Applied Physics Letters, 2(100), p. 022113

DOI: 10.1063/1.3676667

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Ohmic contacts to n-type germanium with low specific contact resistivity

Journal article published in 2012 by Kevin Gallacher, P. Velha, Douglas J. (Professor of Semiconductor Devices)‏ Paul ORCID, I. MacLaren ORCID, Maksym Myronov, D. R. (David R.) Leadley
This paper is available in a repository.
This paper is available in a repository.

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Abstract

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) × 10−7 Ω-cm2 for anneal temperatures of 340 °C. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.