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Instytut Podstaw Informatyki, Acta Physica Polonica A, 5(124), p. 821-823

DOI: 10.12693/aphyspola.124.821

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Carrier dynamics and dynamic band-bending in type-II ZnTe/ZnSe quantum dots

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Carrier dynamics and dynamic band-bending in self-assembled ZnTe/ZnSe quantum dots have been studied by means of time-resolved photoluminescence experiment at low temperatures. The experiment reveals clearly type-II character of the Confinement potential in the dot manifested in: (i) long photoluminescence decay time constant of 28-35 ns, and (ii) temporal shift of the quantum dot peak emission towards low energy following the laser pulse excitation. The magnitude of the spectral shift ΔE depends on the dot size and the power density of excitation pulse. For the dots under study and given experimental conditions ΔE ~ 28 ÷ 42 meV.