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Elsevier, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, (718), p. 554-556

DOI: 10.1016/j.nima.2012.10.107

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Progress on the development of a silicon–carbon nanotube photodetector

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The properties of carbon nanotubes (CNTs), the new allotropic status of carbon discovered in 1991, have been widely investigated in all possible application field. This new material in fact can be easily obtained chemically by CVD (Chemical Vapour Deposition) as a layer of nanotubes growth on a wide variety of materials. When growth on a silicon surface, CNTs create a semiconductor heterojunction with peculiar photoresponsivity properties. We studied this heterojunction with the purpose to realize a large photocathode with high quantum efficiency in a large wavelength range from UV to IR. Results obtained up to day allowed us to build a new kind of photodetector very cheap, stable and easy to manage. Recently this new device has been proposed as one of candidates for the beam monitor system of SuperB.