Conference Name:2011 MRS Spring Meeting. Conference Address: San Francisco, CA, United states. Time:April 25, 2011 - April 29, 2011. ; We report that the high crystalline and high efficiency green emission semipolar {1011} InGaN/GaN multiple quantum wells (MQWs) grown on the {1011} facets of GaN nanopyramid arrays by selective area epitaxy. Clear and sharp interfaces of the semipolar {1011} InGaN/GaN MQWs was observed by transmission electron microscopy images. As comparing with (0001) MQWs, the internal electric field of {10-11} MQWs was remarkably reduced from 1.7 MV/cm to 0.5 MV/cm, and the room temperature (RT) internal quantum efficiency (IQE) at green emission was enhanced by about 80%. This greatly enhancement of IQE is due to suppress the polarization effect in the {1011} MQWs which shorten the radiative recombination to compete with nonradiative recombination at RT. These results evince that the {1011} planes are promising for solving the efficiency green gap of III-nitride light emitters. 漏 2011 Materials Research Society.