American Institute of Physics, Journal of Applied Physics, 10(98), p. 103701
DOI: 10.1063/1.2125120
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The temperature dependence of magnetocurrent (MC) and transfer ratio has been investigated in a magnetic tunnel transistor (MTT) with a ferromagnetic (FM) emitter of Co or Ni 80 Fe 20 . MTT devices of sizes ranging from 10 to 100 μ m in diameter were fabricated using a standard photolithography process and predefined Si substrates. This reduces the edge leakage current across the collector Schottky diode and enables room-temperature operation. For the MTT with both Co and Ni 80 Fe 20 emitter, we obtain a MC of about 80% at room temperature. This corresponds to a tunnel spin polarization of the FM emitter/ Al 2 O 3 interface of 29% at 1 V , demonstrating that the tunnel current is still spin-polarized at a high bias voltage.