Dissemin is shutting down on January 1st, 2025

Published in

American Institute of Physics, Journal of Applied Physics, 10(98), p. 103701

DOI: 10.1063/1.2125120

Links

Tools

Export citation

Search in Google Scholar

Temperature dependence of magnetocurrent in a magnetic tunnel transistor

Journal article published in 2005 by B. G. Park, T. Banerjee ORCID, B. C. Min, J. G. M. Sanderink, J. C. Lodder, R. Jansen
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Orange circle
Published version: archiving restricted
Data provided by SHERPA/RoMEO

Abstract

The temperature dependence of magnetocurrent (MC) and transfer ratio has been investigated in a magnetic tunnel transistor (MTT) with a ferromagnetic (FM) emitter of Co or Ni 80 Fe 20 . MTT devices of sizes ranging from 10 to 100 μ m in diameter were fabricated using a standard photolithography process and predefined Si substrates. This reduces the edge leakage current across the collector Schottky diode and enables room-temperature operation. For the MTT with both Co and Ni 80 Fe 20 emitter, we obtain a MC of about 80% at room temperature. This corresponds to a tunnel spin polarization of the FM emitter/ Al 2 O 3 interface of 29% at 1 V , demonstrating that the tunnel current is still spin-polarized at a high bias voltage.