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American Institute of Physics, Applied Physics Letters, 17(89), p. 171910

DOI: 10.1063/1.2364841

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High quality factor Er3+ -activated dielectric microcavity fabricated by rf-sputtering

Journal article published in 2006 by A. Chiasera ORCID, R. Belli, S. N. B. Bhaktha, A. Chiappini, M. Ferrari ORCID, Y. Jestin, E. Moser, G. C. Righini, C. G. Righini, C. Tosello
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This paper is available in a repository.

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Abstract

The authors report on one-dimensional dielectric photonic crystals activated by Er3+ ion and fabricated by rf-sputtering deposition. The cavity was constituted by an Er3+-doped SiO2 active layer inserted between two Bragg reflectors consisting of six pairs of SiO2∕TiO2 layers. Near infrared transmittance spectra evidence the presence of a stop band from 1350to1850nm and a cavity resonance centered at 1537nm. Intensity enhancement and narrowing of the I13∕24→I15∕24 emission band of Er3+ ion, due to the cavity effect, were observed. A cavity quality factor of 171 was achieved.