Tin sulfide is an attractive absorber material for low-cost thin-film solar cells. Despite the ideal physical properties of bulk SnS, the photovoltaic conversion efficiencies achieved in devices to date have been no greater than 2%. Assessment of the valence band energy of the stable orthorhombic phase of SnS reveals a low ionisation potential (4.7 eV) in comparison to typical absorber materials (CdTe, CuInSe2, and Cu2ZnSnS4). A band mis-alignment is therefore predicted with commonly used back contact and buffer layers. Alternative configurations are proposed that should improve device performance.