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American Institute of Physics, Applied Physics Letters, 12(93), p. 123114

DOI: 10.1063/1.2978243

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Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

Journal article published in 2008 by D. Alonso-Álvarez ORCID, A. G. Taboada, J. M. Ripalda, B. Alen, B. Alén, Y. González, L. González, J. M. García ORCID, F. Briones, A. Martí ORCID, A. Luque, Ana M. Sanchez, S. I. Molina ORCID
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This paper is available in a repository.

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Abstract

In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.