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IOP Publishing, Journal of Physics D: Applied Physics, 24(37), p. 3424-3424, 2004

DOI: 10.1088/0022-3727/37/24/c01

IOP Publishing, Journal of Physics D: Applied Physics, 21(37), p. 3058-3062

DOI: 10.1088/0022-3727/37/21/017

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Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

Journal article published in 2004 by Minju J. Ying, Zhaoquan Q. Zeng ORCID, Xiaolong L. Du, Hao Zheng ORCID, Qikun K. Xue, Zengxia X. Mei, Ze Zhang, Qikun Xue, Yong Wang, Jinfeng F. Jia, M. Ying X. Du Z. Mei Z. Zeng H. Zhen Xue
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed.