IOP Publishing, Journal of Physics D: Applied Physics, 24(37), p. 3424-3424, 2004
DOI: 10.1088/0022-3727/37/24/c01
IOP Publishing, Journal of Physics D: Applied Physics, 21(37), p. 3058-3062
DOI: 10.1088/0022-3727/37/21/017
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The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed.