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American Institute of Physics, Applied Physics Letters, 24(105), p. 243111

DOI: 10.1063/1.4904939

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Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

Journal article published in 2014 by Jean-Philippe Gauthier, Cédric Robert, Samy Almosni ORCID, Yoan Léger, Mathieu Perrin, Jacky Even ORCID, Andrea Balocchi, Hélène Carrere, Xavier Marie, Charles Cornet, Olivier Durand
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This paper is available in a repository.

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Abstract

We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.