Published in

Trans Tech Publications, Solid State Phenomena, (108-109), p. 315-320, 2005

DOI: 10.4028/www.scientific.net/ssp.108-109.315

Trans Tech Publications, Solid State Phenomena, p. 315-320

DOI: 10.4028/3-908451-13-2.315

Links

Tools

Export citation

Search in Google Scholar

Bulk radiation damage induced in thin epitaxial silicon detectors by 24 GeV protons

Journal article published in 2005 by V. Khomenkov, D. Bisello, M. Boscardin, Mara Bruzzi ORCID, A. Candelori, Gf-F. Dalla Betta, G.-F. D. Betta, A. P. Litovchenko, C. Piemonte, R. Rando, B. Pichaud, F. Ravotti, A. Claverie, N. Zorzi, D. Alquier and other authors.
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Red circle
Preprint: archiving forbidden
Red circle
Postprint: archiving forbidden
Green circle
Published version: archiving allowed
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

Radiation hardness of silicon detectors based on thin epitaxial layer for the LHC upgrade was studied. No type inversion was observed after irradiation by 24 GeV protons in the fluence range (1.5-10)(.)10(15) cm(-2) due to overcompensating donor generation. After long-term annealing highly irradiated devices show decrease of effective doping concentration and then undergo type inversion. All mentioned means that thin epitaxial devices might be used for inner-most layers of vertex detectors and need moderate cooling during beam off time. Properly chosen scenario might help to restore their working characteristics.