The impact of boron doping level of nanocrystalline diamond (NCD) films on the character of cell growth (i.e., adhesion, proliferation and differentiation) is presented. Intrinsic and boron-doped NCD films were grown on Si/SiO2 substrates by microwave plasma CVD process. The boron-doped samples were grown by adding trimethylboron (TMB) to the gas mixture of methane and hydrogen. Highly resistive (0 ppm), semiconducting (133 or 1000 ppm), and metallic-like (6700 ppm) NCD films were tested as the artificial substrates for the cultivation of osteoblast-like MG 63 cells. The conductivity and surface charge increased monotonically with the increasing boron content. All NCD substrates showed good biocompatibility and stimulated the adhesion and growth of MG 63 cells. Higher osteocalcin concentration (by more than 30%) for the cells growing on 1000 and 6700 ppm boron-doped NCD films was found which indicates an enhancement in the cell growth biochemistry.