Single-phase Ga2Se3 films have been deposited with a growth rate of about 30 nm min−1 on clean and Mo-coated soda-lime glass substrates by chemical close-spaced vapour transport. The use of HCl/H2 as a transport agent results in a stoichiometric volatilization of the binary Ga2Se3 powder source material and the growth of Ga2Se3 films with reproducible composition. The films have been characterized using x-ray diffraction measurements, scanning electron microscopy observations, energy dispersive x-ray analysis, x-ray fluorescence spectrometry and elastic recoil detection analysis. A p-type conductivity was determined by means of the thermoelectric probe method. A Ga2Se3 band gap energy Eg = 2.56 eV has been found by optical measurements.