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American Physical Society, Physical review B, 2(82)

DOI: 10.1103/physrevb.82.024113

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Vacancy defects inPbTiO3and lanthanide-ion-dopedPbTiO3: A study of positron lifetimes

Journal article published in 2010 by R. A. Mackie, A. Peláiz-Barranco, D. J. Keeble ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Data provided by SHERPA/RoMEO

Abstract

Positron lifetime measurements were performed on lanthanide- (Ln) ion-doped PbTiO3 and identified the presence of both Pb vacancy, V-Pb, and Ti vacancy, V-Ti, related point defects. Increasing the concentration of Ln ions La to Eu resulted in an increase in the dominant contribution to the positron lifetime spectrum from V-Pb-related defects, consistent with donor ion substitution at the Pb site. By contrast, increasing the concentration of Dy ions decreased the ratio of V-Pb- to V-Ti-related defects. The behavior is attributed to the incorporation of Dy3+ ions as acceptors at Ti sites. Density-functional theory calculations of positron lifetimes for vacancy complexes, and relaxed structure monovacancy defects, in PbTiO3 are reported and support the vacancy-defect assignments.