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American Institute of Physics, Applied Physics Letters, 16(90), p. 162103

DOI: 10.1063/1.2722693

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High electron mobility InN

Journal article published in 2007 by Re E. Jones, Sx X. Li, Ee E. Haller, H. C. M. van Genuchten, Hcm Eric van Genuchten, Km M. Yu ORCID, Jw W. Ager ORCID, Z. Zuzanna Liliental-Weber, W. Walukiewicz, H. Lu, Wj J. Schaff
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This paper is available in a repository.

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Abstract

Irradiation of InN films with 2 MeV He+ ions followed by thermal annealing below 500 °C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility.