A simple and versatile method to fabricate micro- and nanoengineered organic field-effect transistors (OFET) from solution processable materials by additive lithographic techniques was reported. The OFETs were built in a bottom-gate, bottom-contact architecture, while heavily-doped Si wafers were used as substrates and gate terminals. The results show that the higher electrical resistivity of OFET electrodes with respect to submicrometric wires results from the size of the MIMIC channels used in a few orders of magnitude larger compared to the characteristic length scales of nucleation. The electrical characterization of OFETs processed by LCW from a 0.06 wt% chloroform solution, fabricated using standard Pd electrodes reveal a modest saturated mobility of 3 × 10-4 cm2 V-1 s -1.