High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250 degrees C, are realized and reported. Saturation mobilities exceeding 2 cm(2)/(Vs) and on-to-off current ratios up to 10(8) are achieved. The usage of these oxide n-type TFTs as the pixel drive and select transistors in future flexible active-matrix organic light-emitting diode (AMOLED) displays is proposed. With these oxide n-type TFTs, fast and low-voltage n-type only flexible circuitry is demonstrated. Furthermore, a complete 8-bit radio-frequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n-type TFTs have reached already a high level of yield and reliability. The integration of the same solution-based oxide n-type TFTs with organic p-type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n-type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line-drive circuitry embedded at the borders of flexible AMOLED displays.