Published in
Begell House, High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, 3-4(13), p. 399-412
DOI: 10.1615/hightempmatproc.v13.i3-4.120
Links
Tools
Modeling pecvd growth of nanostructured carbon materials
,
van de M C. M. Sanden,
Mcm Richard van de Sanden,
Annemie Bogaerts ,
M. C. M. Sanden
Full text: Download
Abstract
We present here some of our modeling efforts for PECVD growth of nanostructured carbon materials with focus on amorphous hydrogenated carbon. Experimental data from an expanding thermal plasma setup were used as input for the simulations. Attention was focused both on the film growth mechanism, as well as on the hydrocarbon reaction mechanisms during growth of the films. It is found that the reaction mechanisms and sticking coefficients are dependent on the specific surface sites, and the structural properties of the growth radicals. The film growth results are in correspondence with the experiment. Furthermore, it is found that thin a-C:H films can be densified using an additional H-flux towards the substrate.