Dissemin is shutting down on January 1st, 2025

Published in

American Chemical Society, Nano Letters, 6(11), p. 2396-2399, 2011

DOI: 10.1021/nl200758b

Links

Tools

Export citation

Search in Google Scholar

Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

Journal article published in 2011 by Alexander S. Mayorov ORCID, Roman V. Gorbachev, Sergey V. Morozov, Liam Britnell, Rashid Jalil, Leonid A. Ponomarenko, Peter Blake, Kostya S. Novoselov, Kenji Watanabe ORCID, Takashi Taniguchi, R. V. Gorbachev S V. Morozov L Britnell R Jalil L A. Ponomarenko P Blake K S. Novoselov K Watanabe T Taniguchi and A. K. Geim A. S. Mayorov, A. K. Geim, Geim Ak
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
  • Must obtain written permission from Editor
  • Must not violate ACS ethical Guidelines
Upload
Orange circle
Postprint: archiving restricted
  • Must obtain written permission from Editor
  • Must not violate ACS ethical Guidelines
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.Keywords: Boron nitride; encapsulated graphene; ballistic transport; negative bend resistance; top gate