We have produced and studied undoped and erbium-doped nanocrystalline silicon thin films in order to evaluate the erbium influence on the film microstructure and how this correlates with the photoluminescence properties. Films were grown by reactive RF sputtering. For the doped films metallic erbium was added to the c-Si target. The structural parameters and the chemical composition of the different samples were investigated by X-ray in the grazing incidence geometry, Raman spectroscopy, ellipsometry and Rutherford Back Scattering. The effect of the nc-Si/SiOx matrix ,i.e., nc-Si volume fraction and the presence of SiO and/or SiO2 phases, on the erbium photoluminescence efficiency is discussed.