Using segmented contact measurements to determine gain versus quasi-Fermi level separation and nonradiative recombination we demonstrate that placing a multiquantum barrier (MQB) within the p-type cladding of 670 nm AlGaInP laser diodes reduces electron leakage current as a function of quasi-Fermi level separation compared to otherwise identical reference devices. At 300 K, where thermally activated leakage is absent, devices with and without a MQB have the same threshold current density whereas at 375 K the threshold current density of a 320 μm laser is reduced by 1735±113 A cm−2 for the device containing the MQB.