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Institute of Electrical and Electronics Engineers, IEEE Journal of Selected Topics in Quantum Electronics, 6(12), p. 1570-1578, 2006

DOI: 10.1109/jstqe.2006.884069

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Toward Silicon-Based Lasers for Terahertz Sources

Journal article published in 2006 by Stephen Anthony Lynch, Douglas J. Paul ORCID, Paul Townsend, Guy Matmon, Zhang Suet, Robert W. Kelsall, Zoran Ikonic, Paul Harrison, Jing Zhang, David J. Norris, Anthony G. Cullis, Carl R. Pidgeon, Pawel Murzyn, Ben Murdin, Mike Bain and other authors.
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried silicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser.