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Elsevier, Materials Science and Engineering: B, 1-3(89), p. 10-12

DOI: 10.1016/s0921-5107(01)00782-6

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Si-based electroluminescence at THz frequencies

Journal article published in 2002 by Stephen Anthony Lynch, S. S. Dhillon, R. Bates, D. J. Paul ORCID, D. D. Arnone, D. J. Robbins, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, A. G. Cullis, C. R. Pidgeon, P. Murzyn, A. Loudon
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.