Published in
IOP Publishing, Semiconductor Science and Technology, 4(19), p. S465-S468
DOI: 10.1088/0268-1242/19/4/153
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Nonequilibrium electron distribution in terahertz intracentre silicon lasers
Journal article published in 2004 by
S. G. Pavlov,
H.-W. Hübers,
E. E. Orlova 
,
R. Kh-H. Zhukavin,
V. N. Shastin
,
R. Kh-H. Zhukavin,
V. N. Shastin
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Preprint: archiving forbidden
Postprint:
archiving forbidden
Published version:
archiving forbidden
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Abstract
Optical excitation of shallow donor centres in silicon creates an inverted electron distribution on the Coulomb centres at low lattice temperature. The population inversion is formed due to the peculiarities of the electron-phonon interaction of free and bound charge carriers. At certain conditions stimulated emission in the THz frequency range from group-V donors in silicon can be obtained.