There is a great deal of interest in the underlying causes of efficiency droop in InGaN/GaN quantum well light emitting diodes, with several physical mechanisms being put forward to explain the phenomenon. In this paper we report on the observation of a reduction in the localisation induced S-shape temperature dependence of the peak photoluminescence energy with increasing excitation power density. This S-shape dependence is a key fingerprint of carrier localisation. Over the range of excitation power density where the depth of the S shape is reduced we also observe a reduction in the integrated photoluminescence intensity per unit excitation power, i.e. efficiency droop. Hence the onset of efficiency droop occurs at the same carrier density as the onset of carrier delocalisation. We correlate these experimental results with the predictions of a theoretical model of the effects of carrier localisation due to local variations in the concentration of the randomly distributed In atoms on the optical properties of InGaN/GaN quantum wells. On the basis of this comparison of theory with experiment we attribute the reduction in the Sshape temperature dependence to the saturation of the available localised states. We propose that this saturation of the localised states is a contributory factor to efficiency droop whereby non localised carriers recombine non-radiatively.