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American Institute of Physics, Applied Physics Letters, 24(91), p. 241907

DOI: 10.1063/1.2816262

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Raman imaging of doping domains in graphene on SiO2

Journal article published in 2007 by C. Stampfer, D. Graf, F. Molitor, K. Ensslin, A. Jungen, C. Hierold, Ludger Wirtz ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line-the most significant Raman peak to identify single-layer graphene-as a function of charging up to vertical bar n vertical bar approximate to 4x10(12) cm(-2). Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the linewidth of the 2D line is, in contrast to the G line, doping independent making this quantity a reliable measure for identifying single-layer graphene. (C) 2007 American Institute of Physics.