Dissemin is shutting down on January 1st, 2025

Published in

Instytut Podstaw Informatyki, Acta Physica Polonica A, 2(117), p. 293-295, 2010

DOI: 10.12693/aphyspola.117.293

Links

Tools

Export citation

Search in Google Scholar

A comparison of the valence band structure of bulk and epitaxial GeTe based diluted magnetic semiconductors

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Red circle
Preprint: archiving forbidden
Red circle
Postprint: archiving forbidden
Green circle
Published version: archiving allowed
Data provided by SHERPA/RoMEO

Abstract

In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a, set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p→3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.