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SpringerOpen, Nanoscale Research Letters, 1(7), 2012

DOI: 10.1186/1556-276x-7-643

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Theoretical and experimental studies of (In,Ga)As/GaP quantum dots

Journal article published in 2012 by Cedric Robert, Tra Nguyen Thanh, Charles Cornet ORCID, Pascal Turban ORCID, Mathieu Perrin, Andrea Balocchi, Herve Folliot, Nicolas Bertru, Laurent Pedesseau, Mikhail O. Nestoklon, Jacky Even ORCID, Jean-Marc Jancu, Sylvain Tricot, Olivier Durand, Xavier Marie and other authors.
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.