We report the growth of InAs quantum dots (QDs) on (001) and (113)B InP substrates by molecular beam epitaxy. For the (113)B orientation, a very high QDs density (1.6E11cm-2) with a QDs self-organization have been demonstrated, thus showing high optical efficiency. More recently, improvements of the QDs density have been brought on conventional (001) InP substrate. A maximum QDs density of 9E10 cm-2 has been obtained using a low arsine flow rate and substrates with a slight misorientation.