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Wiley, physica status solidi (c), 10(6), p. 2212-2216, 2009

DOI: 10.1002/pssc.200881728

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Light emitting diodes on silicon substrates: preliminary results

Journal article published in 2009 by Soline Richard, Alexandre Bondi, Weiming Guo, Laurent Pedesseau, Soline Boyer-Richard ORCID, Hervé Folliot, Nicolas Chevalier, Charles Cornet ORCID, Antoine Létoublon, Antoine Letoublon, Olivier Durand, Chistophe Labbé, Maud Gicquel, Alain Le Corre, Alain Le Corre and other authors.
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

III-V quantum wells (QW) superlattices have been grown by molecular beam epitaxy on GaP substrates for photonics applications on silicon. We first present room temperature photoluminescence (PL) results for GaAsP/GaP QWs. A detailed analysis of low temperature PL experiments is then performed. QW contribution is pointed out, and the structuration of the QW emission is attributed to LA phonon replica. A comparison with electronic bandstructure is performed, and a discussion is proposed on the nature of the observed transition (direct or indirect). Finally, it is shown that these QWs can be used as active zone in light emitters on silicon. Growth of good quality GaP epilayers on silicon is also presented. The crystalline quality of the deposited GaP near the GaP/Si interface is studied by Raman spectroscopy. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim