Published in

Wiley, physica status solidi (c), 10(6), p. 2207-2211, 2009

DOI: 10.1002/pssc.200881722

Links

Tools

Export citation

Search in Google Scholar

First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE

Journal article published in 2009 by Weiming Guo, Soline Richard, Alexandre Bondi, Charles Cornet ORCID, Hervé Folliot, Antoine Létoublon, Soline Boyer-Richard ORCID, Nicolas Chevalier, Maud Gicquel, Bassem Alsahwa, Alain Le Corre, Alain Le Corre, Jacky Even ORCID, Olivier Durand, Slimane Loualiche
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Orange circle
Postprint: archiving restricted
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

We have grown InAs and InP quantum dots (QDs) on GaP substrate by Molecular Beam Epitaxy (MBE) and analysed them by Atomic Force Microscopy (AFM) and photoluminescence (PL). AFM images confirm the formation of InAs and InP QDs. Largest InAs QDs density is obtained at a growth temperature of 450 °C and under an AsH3 flux of 0.3SCCM. The evolution of QDs shape and absence of photoluminescence indicate a likely plastic relaxation of the strain between InAs and GaP. Concerning InP/GaP QDs, their lateral size, height and density indicate good quality QDs. Photoluminescence signal has been detected for capped InP/GaP QDs until 180 K. The unchanged peak position with respect to InP coverage is attributed to the nearly constant height of the QDs. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)