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Wiley, Advanced Functional Materials, 21(34), 2024

DOI: 10.1002/adfm.202310438

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Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

AbstractThe rapid development in information technologies necessitates rapid advancements of their supporting hardware. In particular, new computing paradigms are needed to overcome the bottleneck of traditional von Neumann architecture. Bottom‐up innovation, especially at the materials and devices level, has the potential to disrupt existing technologies through their emergent phenomena. As a new type of conceptual device, 2D ferroelectric field‐effect transistor (FeFET) is highly sought after due to its potential integration with modern semiconductor processes. Its low power consumption, area efficiency, and ultra‐fast operation provide an extra edge over traditional technologies. This review highlights recent developments in 2D FeFET, covering their device construction, working mechanisms, 2D ferroelectric polarization mechanism, multi‐functional applications and prospects. In particular, the combination of 2D semiconductor and ferroelectric dielectric materials for multi‐functionality applications is discussed. This includes non‐volatile memories (NVM), neural network computing, non‐volatile logic operation, and photodetectors. As a novel device platform, 2D semiconductor and ferroelectric interfaces are bestowed with a plethora of emergent physical mechanisms and applications.