Depletion-Mode Ga2O3 MOSFETs on beta-Ga2O3 (010) Substrates with Si-Ion-Implanted Channel and Contacts
Journal article published in 2013 by
Masataka Higashiwaki 
,
Kohei Sasaki,
Man Hoi Wong,
Takafumi Kamimura,
Daivasigamani Krishnamurthy,
Akito Kuramata,
Takekazu Masui,
Shigenobu Yamakoshi,
Ieee
,
Kohei Sasaki,
Man Hoi Wong,
Takafumi Kamimura,
Daivasigamani Krishnamurthy,
Akito Kuramata,
Takekazu Masui,
Shigenobu Yamakoshi,
Ieee
