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Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 11(44), p. 1829-1832, 2023
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Suppression of Drain Current Leakage and Short-Channel Effect in Lateral Ga<sub>2</sub>O<sub>3</sub> RF MOSFETs Using (Al<sub> x </sub>Ga<sub>1-x </sub>)<sub>2</sub>O<sub>3</sub> Back-Barrier
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