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Elsevier, Organic Electronics, 10(15), p. 2250-2255, 2014

DOI: 10.1016/j.orgel.2014.06.018

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Correcting for contact geometry in Seebeck coefficient measurements of thin film devices

Journal article published in 2014 by S. Stephan van Reenen, Martijn Kemerink ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Driven by promising recent results, there has been a revived interest in the thermoelectric properties of organic (semi) conductors. Concomitantly, there is a need to probe the Seebeck coefficient S of modestly conducting materials in thin film geometry. Here we show that geometries that seem desirable from a signal-to-noise perspective may induce systematic errors in the measured value of S, S-m, by a factor 3 or more. The enhancement of S-m by the device geometry is related to competing conduction paths outside the region between the electrodes. We derive a universal scaling curve that allows correcting for this and show that structuring the semiconductor is not needed for the optimal electrode configuration, being a set of narrow, parallel strips.